Efficient energy transfer from silicon oxycarbide matrix to Er ions via indirect excitation mechanisms

Efficient Er excitation was observed in Er-doped silicon oxycarbide with strong room-temperature photoluminescence of ∼1540nm within a broad (460–600nm) band. Er PL power dependence modeling yielded an effective Er excitation cross section of approximately four orders of magnitude higher than direct Er excitation. PL for undoped a-SiC0.5O1.0 extended from visible to near infrared (500–750nm), with intensity decreasing with Er doping. Er photoluminescence excitation overlapped with the Urbach edge in a-SiC0.5O1.0:Er absorption spectrum. Energy transfer from electron-hole recombination at band edges or/and defect levels in a-SiC0.5O1.0:Er may provide an efficient excitation route for Er ions via electron excitation from ground state (I15∕24) to 4f levels.