A comprehensive model for metal-insulator-semiconductor (MIS) devices under dark conditions which consists of a wide range of parameters has been developed. Parameters neglected by other authors have been included. The effects of surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function are taken into account. The permittivity and barrier height of thin oxide are included in the calculation. The limits on equilibrium and nonequilibrium are explored.>
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Doghish et al. (1992) studied this question.
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