Determination of minority carrier mobility in silicon from stationary and transient lifetime measurements

The minority carrier diffusion coefficient in Si as a function of dopant density is evaluated by comparing the diffusion length, as obtained by a steady state method (using a combination of the photoelectromagnetic (PEM) effect and the steady state photoconductivity (PC) effect) and a life-time obtained by the photoconductivity decay (PCD) method. Within the limits of the experimental data dispersion, the electron minority diffusinn coefficients are found to be comparable to the majority ones in the doping range 3 × < NA < 3 × 1017 cm−3. The minority hole diffusion coefficients are about 36% higher than the majority hole coefficients in the doping range 6.1 × × 1013< ND < 7.1 × 1016cm−3.