Ultraviolet (350 nm) and visible (514 nm and 647 nm) laser light have been employed to enhance silicon etching and to perform in situ patterning in a plasma reactor containing CF4/O2 or NF3 reactants. The etch rate enhancement is dependent on dopant concentration and laser wavelength. This dependence has been related to the number of photogenerated carriers on the semiconductor surface.
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Reksten et al. (1986) studied this question.
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