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March 1, 1985Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Analysis of carbon and oxygen in GaAs using a secondary ion mass spectrometer equipped with a 20 K-cryopanel pumping system

Yoshikazu Homma Yoshikazu Ishii

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Abstract

The detection of carbon and oxygen in GaAs has been investigated by secondary ion mass spectrometry (SIMS). A reduction in carbon and oxygen background is achieved by means of a local pumping system using a 20 K-cryopanel placed around the sample. Detection limits are 4×1015 atoms/cm−3 for carbon, and 8×1015 atoms/cm−3 for oxygen.

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Homma et al. (1985) studied this question.

synapsesocial.com/papers/6a9ecb1717da107d9cbe6987 https://doi.org/10.1116/1.573220

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