Neutral-donor-bound exciton recombination (I2) dynamics have been studied by photoluminescence in an unintentionally doped n-type GaN epitaxial layer grown by metalorganic chemical vapor deposition. The luminescence emission line shape, peak position, and intensity as functions of temperature have been measured. In particular, time-resolved emission spectroscopy has been employed to study the dynamic processes of the bound exciton recombination, from which the temperature and the emission energy dependencies of the recombination lifetime of this transition have been obtained.
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Chen et al. (1995) studied this question.
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