Using transient four-wave-mixing and time-resolved photoluminescence experiments we investigate the influence of bare electrons on the phase and energy relaxation of excitons in a mixed type-I--type-II GaAs/AlAs double-quantum-well structure. We find that exciton-electron scattering is twice as efficient as exciton-exciton scattering. As a consequence, the rates for exciton formation and for energy relaxation of free excitons to K{}0 are enhanced. Additionally, localized excitons become mobile in the presence of bare electrons leading to a more complete relaxation of excitons into the energetically lowest quantum-well states.
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Koch et al. (1995) studied this question.
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