Hot-carrier degradation of LDD MOSFET's with gate oxynitride grown in N/sub 2/O

Hot carrier immunity (HCI) of single drain (SD) and lightly doped drain (LDD) n-MOSFET's with gate oxide and N/sub 2/O gate oxynitride was compared. Gate oxynitride shows better HCI than gate oxide in SD devices but comparable in LDD devices. We show that oxide grown during the poly-silicon oxidation process after gate poly-silicon definition plays an important role in determining the hot carrier resistance of LDD n-MOSFET's with N/sub 2/O gate oxynitride.>