Growth of InAsSb-channel high electron mobility transistor structures

We discuss the molecular beam epitaxial growth of the random alloy InAsSb for use as the channel in high electron mobility transistors (HEMTs). Room-temperature mobilities of 22000cm2∕Vs have been achieved at a sheet carrier density of 1.4×1012∕cm2. This is a marked improvement over the mobility of 13000cm2∕Vs at the same carrier density obtained in previous attempts to grow the InAsSb channel using a digital alloy procedure [J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, R. Bass, Electron. Lett. 35, 847 (1999)]. We have also implemented different barriers and buffer layers to enhance the transport properties and overall performance of the HEMT structure.