Electron spin relaxation by the D’yakonov-Perel’ mechanism is investigated theoretically in asymmetrical III–V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments.
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Averkiev et al. (2002) studied this question.
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