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A complete microscopic picture of the germanium vacancy is presented, and our results are compared with recent measurements. We analyze, through first principles calculations, the structural relaxations, Jahn-Teller distortions, and orbitals for the charge states (++,+,0,-,--). The formation energies for the different charge states are presented, as well as the positions of the $(++/+),$ $(+/0),$ (0/-), and (-/--) levels, and we obtain that the vacancy in Ge is not an Anderson negative-U system, as opposed to the silicon vacancy. We propose as an explanation a much smaller electron-lattice coupling for the E mode in germanium than in silicon.
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Fazzio et al. (2000) studied this question.
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