Modelling the MOS transistor at high frequencies

A new small-signal model of an MOS transistor, valid at high frequencies, is presented. As a major advantage compared with earlier models, this model takes into account the non-quasistatic and transmission-line effects of the transistor. By using S-parameter measurements, computer-controlled calibration techniques of test set-up and network analyser, mathematical transformations and fit routines, all the AC model parameters can be obtained.