A 5 Gbit/s optical receiver module was developed by using a wideband transimpedance Si IC and a high gain-bandwidth product GaInAs APD. A 6 GHz bandwidth Si IC utilising a f1 = 20 GHz Si MMIC process, bare chip mounting of a Si IC and an APD to minimise parasitic capacitance, made it possible to realise high speed operation and high receiver sensitivity of −31.8 dBm.
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Fujita et al. (1990) studied this question.
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