Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure

ZnO based heterostructure, which contains magnetic impurities in the barrier layer, is grown on c-cut sapphire substrate by pulsed laser deposition. The temperature dependence of the mobility of the Zn0.9Mn0.1O/ZnO heterostructure exhibits the suppression of ionized impurity scattering below 100 K. The carrier concentration and the mobility measured at 1.85 K are 4.0×1012 l/cm2 and 360 cm2/V s. Shubnikov–de Haas oscillations are clearly observed in longitudinal magnetoresistance above 3.7 T at the same temperature. These transport properties reveal that two-dimensional electron gas is successfully obtained at the Zn0.9Mn0.1O/ZnO interface.