We demonstrate the introduction of high carrier densities into two and three-dimensional magnetic semiconductor heterostructures that contain large local concentrations of magnetic moments. The use of (ZnSe)m−f(MnSe)f digital alloys readily allows the fabrication of epilayer samples of moderate Mn composition with carrier concentrations up to ∼1019 cm−3. Modulation doping of ZnSe/Zn1−x−yCdyMnxSe quantum wells enables the fabrication of a 2-D electron gas confined within the magnetic region with sheet concentrations up to ∼6×1011 cm−2.
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Smorchkova et al. (1996) studied this question.