PiN InGaN nanorod solar cells with high short-circuit current

We report on the photovoltaic characteristics of molecular beam epitaxy-grown PiN InGaN nanorod solar cells. The glancing angle deposition process was adapted to grow continuous transparent metal layers on discontinuous nanorods. A short-circuit current density of 4.6 mA/cm 2 and an open-circuit voltage of 0.22 V with a power conversion efficiency of 0.5% under 1 sun, air-mass 1.5, illumination were observed. The excellent light-generated current in the InGaN nanorod solar cells is considered to stem from the improved crystal quality owing to the strain-free nature as well as the enhanced light concentration effects in the nanorod configuration.