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April 22, 1996Physical Review Letters

Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)

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Authors

FLFeng LiuSouth China Agricultural UniversityMLM. G. LagallyUniversity of Wisconsin–Madison

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Liu et al. (1996) studied this question.

synapsesocial.com/papers/6a9ee1dc0fc97ef28e11f972https://doi.org/10.1103/physrevlett.76.3156
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Reversal of Step Roughness on Ge-Covered Vicinal Si(001)1995 · 71 citations
  2. 2Spontaneous Formation of Stress Domains on Crystal Surfaces1988 · 687 citations
  3. 3Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon1959 · 888 citations
  4. 4Influence of surfactants in Ge and Si epitaxy on Si(001)1990 · 347 citations
  5. 5Atomic Level Stresses in Solids and Liquids1987 · 189 citations