We report the growth by molecular beam epitaxy of the dilute magnetic semiconductor Zn1−xFexSe on GaAs(100) substrates. The epilayers were characterized in situ by reflection high-energy electron diffraction and Auger electron spectroscopy, and by x-ray θ-2θ and rocking curve measurements. We obtain the variation of lattice parameter and optical band gap for 0≤x≤0.22. Both increase linearly with Fe concentration in this range, but the increase is much less than that reported for Zn1−xMnxSe.
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Jonker et al. (1987) studied this question.
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