Organometallic Chemical Vapor Deposition of Palladium under Very Mild Conditions of Temperature in the Presence of a Low Reactive Gas Partial Pressure

Palladium thin-film deposition was carried out from the known precursors Pd(η 3 -C 3 H 5 )(Cp), and Pd(η 3 -C 3 H 5 )(hfa), where Cp is (η 5 -C 5 H 5 ), cyclopentadienyl ligand and hfa is (CF 3 COCHCOCF 3 ), hexafluoroacetylacetonato ligand. The use of a reactive gas such as dihydrogen led to unexpected low temperatures of deposition (30−60 °C). XPS and electron microprobe analyses revealed that low levels of carbon are incorporated to the palladium films. X-ray analyses showed crystalline deposits and scanning electron microscopy revealed grains of 300−1000 nm. Gas-phase analyses by mass spectrometry and GC/MS of deposition residues were realized to clarify the reaction mechanisms. Such a deposition process leads to metallic palladium with a good purity level.