Vertical AlGaN Deep Ultraviolet Light Emitting Diodes with Polarization Enhanced p-AlGaN Epilayer on Si Substrate

This is the authors' abstract. We don't add key points for this paper.

Despite of the technological importance of developing AlGaN deep UV LEDs on Si, there are only a few reports about AlGaN deep UV LEDs on Si based on AlGaN epilayers. Herein, we show vertical AlGaN deep UV LEDs on Si with polarization enhanced p-AlGaN epilayer. The devices emit at 278 nm, with uniform current injection. Compared to devices using standard p-AlGaN epilayer, the series resistance of devices with polarization enhanced p-AlGaN epilayer is reduced by a factor of 5. This work represents the first report of AlGaN deep UV LEDs on Si with polarization enhanced p-AlGaN epilayers.