Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

Dependence of hot-electron noise temperature on supplied electric power is measured at room temperature for an AlGaN/AlN/GaN channel with a two-dimensional electron gas (1 × 1013 cm–2). The results are interpreted in an electron-temperature approximation for a 5-subband model with electron-gas degeneracy taken into account. The fitting is obtained when non-equilibrium (hot) longitudinal optical (LO) phonons are taken into account. The estimated effective occupancy of the involved LO-phonon states exceeds the equilibrium one more than 30 times at 2000 K electron temperature. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)