High-temperature dielectric responses in all-nanosheet capacitors

We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru 0.95 O 2 as electrodes and dielectric Ca 2 Nb 3 O 10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high- k dielectric response (∼155) and a moderate insulation resistance (∼1 × 10 −5 A/cm 2 ) at high temperatures up to 200 °C. The concomitant presence of high ε r , low leakage profile, and thermal stability in high- k nanocapacitors is critically important for application in high-temperature electronics.