Our transport study of the narrow-gap, bulk (three-dimensional) semiconductors Hg_1-x{Cd}ₓ$Te and InSb reveals incipient, nonquantized ``Hall plateaus'' which coincide with minima of the Shubnikov--de Haas oscillations, analogous to the quantum Hall effect in two-dimensional systems. We attribute this effect to the existence of quasi-mobility-gaps at the bottom of each Landau level, originating from localization due to shallow hydrogenic donors and disorder.
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R. G. Mani (1990) studied this question.
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