An experimental investigation of dynamic lasing characteristics in oxide-confinement InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) grown on GaAs(311)A substrates is presented. A stable single polarisation mode was exhibited along the [2̄33] crystallographic direction under continuous wave (CW) operation and under high-speed direct modulation with a data rate of 1 Gbit/s.
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Takahashi et al. (1998) studied this question.
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