Currently, a high frequency device more than 3 GHz is required. High frequency resonators with resonant frequencies of 4.5 and 6.3 GHz were fabricated by utilizing an anti‐symmetric first mode (A1) of a Lamb wave having a high velocity consisting of a thin LiNbO3 film deposited by a chemical vapor deposition (CVD) system. By measuring polarities of their LiNbO3 films, it was clarified that the thinner film had a large mixture of +c and −c domains, and the occupation ratio of main polarity influenced their frequency characteristics.
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Kadota et al. (2011) studied this question.
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