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Highly conducting and optically transparent ZnO:Ga films with dominant c -axis orientated ( I <002> / I <101> ∼ 40) wurtzite structure grown at 50 °C and 50 W RF power in magnetron sputtering exhibit allowed Raman active A 1 (LO) mode and intense UV-luminescence.
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Das et al. (2016) studied this question.
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