We have grown undoped Mg x Zn 1- x O films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration ( N D ) was evaluated by capacitance–voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of N D to reach (2–7) × 10 14 cm -3 for Mg x Zn 1- x O films with MgO molar fractions x ranging from 0 to 0.39. These Mg x Zn 1- x O films with low residual N D values would be suitable host materials for p-type doping.
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Akasaka et al. (2010) studied this question.
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