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Vertical aligned ZnO nanorod (diameter = 50 nm) arrays on indium tin oxide (ITO) substrates have been grown using a new two-step soft chemical procedure. The resulting current–voltage ( I – V ) characteristics of the ZnO nanorods exhibited a clear rectifying behaviour. This rectifying behaviour was attributed to the formation of a Schottky contact between the Au coated atomic force microscopy (AFM) tip and ZnO nanorod (nano-M/SC) which was dominated by the surface states in ZnO itself. Photo-assisted conductive AFM (PC-AFM) was used to demonstrate how the I – V characteristics are influenced by the surface states. Our I–V results also showed that the nano-M/SCs had a good photo-electric switching effect at reverse bias.
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Cheng et al. (2007) studied this question.
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