Transparent conducting films of ZnO–ZrO2: Structure and properties

Transparent conducting films comprised of ZnO and ZrO2, with ZrO2 content varying between 0 and 10 wt %, have been deposited using pulsed-laser deposition. These films have resistivities ranging between 5.4×10−4 and 5.6×10−2 Ω cm with an optical transparency of more than 85% for the 250–900-nm-wavelength range. For films with ZrO2 content of less than 5 wt %, the hexagonal ZnO structure is observed with Zr substituting at the Zn site. The structural, optical, and electrical properties of these films make them suitable for high-temperature electronic applications.