Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys

The electronic structure of InN x As1- x ordered alloys (x=0.25, 0.5 and 0.75) are calculated based on a semi-empirical tight-binding method. The alloy is found to have direct band gaps throughout the entire composition range. The band-gap bowing parameter c in E g=0.36+1.53x+c x(x-1) eV of the alloy InN x As1- x is larger with larger valence-band discontinuity between InAs and InN, and is 4.22 eV if a theoretical value of 3.79 eV given by Harrison's theory is assumed.