Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi 0.95 Co 0.05 O 3 Film

Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large‐scale BaTi 0.95 Co 0.05 O 3 (BTCO) film with a SrRuO 3 (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500–800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive‐switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25–180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.