Magnetron enhanced reactive ion etching of SiC has been investigated in SF6 plasmas. Etch rate was determined as a function of cathode power density (0.1–0.5 W/cm2), pressure (1–5 mTorr), and flow rate (5–15 sccm). The highest SiC etch rates yet reported (450 nm/min) were achieved, at low cathode bias voltage (100 V). Anisotropic etch profiles were obtained with smooth etch surfaces free of micromasking. Addition of O2 to the SF6 feed gas did not increase the etch rate.
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McLane et al. (1996) studied this question.