The infrared absorption spectra of hydrogenated amorphous silicon nitride (a-SiN:H) films have been measured. Two absorption bands for the NH2 bonding group appear at ∼3450 cm-1 and ∼1550 cm-1, which are assigned to the NH2 stretching mode and NH2 bending mode, respectively. Isochronal annealing measurements show that the NH2 bonding configuration has more excellent thermal stability than the NH bonding configuration. In addition, the change of the integrated absorption intensity of the Si-N asymmetric stretching mode is observed with increasing annealing temperature.
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Narikawa et al. (1985) studied this question.
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