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130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts, Bhattacharyya, Arkka, Roy, Saurav, Ranga, Praneeth, Shoemaker, Daniel, Song, Yiwen, Lundh, James Spencer, Choi, Sukwon, Krishnamoorthy, Sriram
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Bhattacharyya et al. (2021) studied this question.
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