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A simple and fast method for sensing four states from a single Pseudo-Spin Valve GMR device is presented. Four state sensing shows promise of doubling the potential bit density of Magnetic Random Access Memory (MRAM) and related devices. A new two step method to detect the GMR bit information has been developed here that is simple to implement and which easily allows for compensation of rapid self-heating effects.
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Zhang et al. (1999) studied this question.
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