Infrared Absorption Properties of Nanocrystalline Cubic SiC Films

Nanocrystalline cubic SiC films, in which SiC grain size depends on film thickness, are prepared by hydrogen-plasma sputtering. Infrared absorption properties of the films are studied by analyzing the grain-size effects on the Si–C stretching absorption peak at 800 cm-1. Absorption intensity of the Si–C stretching mode depends on both the SiC grain size and the content of the excess carbon in the films. A compressive strain in the internal parts of the films shifts the absorption peak to a higher wave number.