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A new synthetic route for the deposition of CoAl 2 O 4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(O i C 3 H 7 ) 4 ] 2 } is presented. Molecular properties of {Co[Al(O i C 3 H 7 ) 4 ] 2 } have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV−vis, and SIMS measurements.
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Habra et al. (2007) studied this question.
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