Single source precursors can greatly simplify CVD processes, but few are known for ternary compounds. Here, for the first time, successful precursors—heterometallic alkyl alkoxides (see Figure)—are described for the MOCVD of magnesium aluminate. The results show that the method yields stoichiometric films with little contamination.
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Koh et al. (1998) studied this question.
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