Temperature dependence of electron transport and generation in biphenyl

Drift mobilities of electrons in biphenyl in the a, b, and c′ crystal directions have been measured by the pulsed photoconductivity method and are 0.42, 1.25, and 0.51 cm2/V sec, respectively, at room temperture. For the a and c′ crystal directions these mobilities show a T−1.0 dependence, and a T−1.25 dependence for the b direction. No hole photocurrents were observed. The mechanisms of carrier transport and generation are discussed in terms of current theories.