A new doping method for the vertical sidewall of a trench by electron cyclotron resonance plasma is described. The plasma was produced under a pressure of 5×10−4 Torr. A doped layer was formed uniformly along the sidewall of a trench with subhalf micron width and an aspect ratio of 6.2. By using a de-ionized water cooling system, the wafer temperature was maintained below 120 °C and the boron dopant was introduced without damage to the photoresist.
No takes yet. Share an insight, caveat, or question.
Mizuno et al. (1988) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: