The extension of the charge pumping technique to gated P+IN+ diodes fabricated on silicon on insulator is analysed. This method allows us to evaluate the interface properties in SOS and SIMOX structures, without the need for 5-terminal MOS transistors. The experiment, performed on SIMOX films by pulsing both the gate and substrate, reveal the existence of a high density of fast interface states and bulk traps near the buried oxide.
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Elewa et al. (1988) studied this question.