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January 25, 2010Journal of International Crisis and Risk Communication ResearchOpen Access

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

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Authors

AMA. V. MuravjovRensselaer Polytechnic InstituteDVDmitry VekslerHRL Laboratories (United States)VPV. V. PopovInstitute of Radio-Engineering and Electronics

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Muravjov et al. (2010) studied this question.

synapsesocial.com/papers/6a9fc97937a2f8dc0e61883ahttps://doi.org/10.1063/1.3292019
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