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May 15, 1986Applied Optics

Stressed Ge:Ga infrared detectors: performance and operational parameters

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Authors

DLD. LutzUniversity of StuttgartDLD. LemkeMax Planck Institute for AstronomyJWJ. WolfNational Nuclear Security Administration

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Lutz et al. (1986) studied this question.

synapsesocial.com/papers/6a9fc9c80fbdfd5dd81de3fbhttps://doi.org/10.1364/ao.25.001698
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ge : Ga photoconductors in low infrared backgrounds1979 · 107 citations
  2. 2Origin and Control of the Dominant Impurities in High-Purity Germanium1976 · 33 citations
  3. 3Far-infrared photoconductivity of uniaxially stressed germanium1977 · 65 citations