Pulsed current operated light emitting diodes (LED’s) and semiconductor laser heterostructures for the wavelength range 5.3–5.7 μm have been prepared employing dilute magnetic Hg1−x−y Cdx Mny Te and Hg1−x Mnx Te semiconductors. The influence of the excitation current, temperature, and magnetic field on the spectral characteristics of the spontaneous and stimulated emission have been studied. Diodes and lasers were fabricated through a combination of Bridgman, isothermal vapor and liquid phase epitaxy growth, substitutional doping, and annealing in a mercury saturated atmosphere. The series resistivity of the devices was reduced by using highly doped and graded composition substrates. A high optical confinement factor and low threshold current density were achieved using a double‐sided heterostructure configuration.
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P. Becla (1988) studied this question.