Uniformity of overdamped Josephson junctions consisting of trilayered NbCN/TiN/NbCN films has been investigated. To achieve uniform TiN-film thickness and uniform critical-current density J c for junctions, we introduced substrate-holder rotation in the fabrication process of TiN films. As a result, variation of TiN-film thickness over a distance of 60 mm on a wafer was reduced to ±1.9% and that of J c for junctions to ±5%. With an increase in TiN-film thickness from 40 nm to 65 nm, J c decreased from 5.6 ×108 A/m2 to 1.7 ×108 A/m2 and the product of critical current I c and normal-state resistance R n for junctions decreased from 100 µV to 10 µV.
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Hirotake Yamamori (1999) studied this question.
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