Photoluminescence has been measured for double- and separate-confinement InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic vapor deposition. A measurement of the integrated luminescence intensity at the temperature range of 77–300 K shows that over a wide range of excitation level (1–5×102 W/cm2) the radiative transitions are the dominant mechanism below T∼170 K. Auger recombination coefficient C=C0 exp(−Ea/kT) with C0≊5×10−27 cm6/s and Ea≊40 meV has been estimated.
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Kim et al. (1996) studied this question.