Precision modeling of the mask–substrate evolution during ion etching

A precise and detailed study of mask–substrate system evolution under spatially uniform ion flux erosion conditions is presented. Theoretical, geometrical, and computational approaches for homogeneous, heterogeneous, and time‐dependent systems are briefly discussed. It is shown that the model is general and valid for any mask–substrate system. An example is given which shows how the same model can be used to optimize a bilayer resist system.