(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric films with a thickness of about 1.7 μm were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm2 over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm3 at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, ΔT = 8.5 °C, was obtained near the phase-transition temperature.
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Hao et al. (2011) studied this question.
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