What does this research mean for the field?

Low-cost coke is an effective alternative carbon source for the in-situ synthesis of SiC whiskers, with optimal whisker formation and structural evolution occurring at 1300–1400 °C. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

Investigate the temperature-dependent structural rearrangement of coke and the growth behavior of silicon carbide whiskers synthesized from coke and silicon powder under graphite-burial conditions.

September 8, 2026MaterialsOpen Access

Temperature-Dependent Evolution of Coke Structure and Growth Mechanisms of SiC Whiskers Synthesized from Coke and Silicon Powder Under Graphite-Burial Conditions

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Investigate the temperature-dependent structural rearrangement of coke and the growth behavior of silicon carbide whiskers synthesized from coke and silicon powder under graphite-burial conditions.
Synthesized silicon carbide whiskers using industrial coke and silicon powder heated between 1100 °C and 1400 °C under graphite-burial conditions.
Analyzed structural evolution, phase transformation, and morphology using thermogravimetry-differential scanning calorimetry, X-ray diffraction, and transmission electron microscopy.
Coke underwent a 16.01% mass loss during heating, developing enhanced short-range structural ordering at 1200–1400 °C while retaining a stable turbostratic carbon framework.
Crystalline silicon carbide yield increased from ~4–11% at 1100–1200 °C via vapor-solid pore growth to complete consumption of crystalline silicon by 1300 °C, spreading whiskers across the matrix surface.
Whiskers formed at 1400 °C comprised crystalline β-SiC with high-density stacking faults and radial coarsening, reaching diameters of 35–80 nm.

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Implication

Experimental study demonstrates enhanced silicon carbide whisker growth across coke structural rearrangement at 1200–1400 °C, highlighting coke as an effective internal source for refractories.

Cite This Study

Jiang et al. (2026) studied this question.

synapsesocial.com/papers/6a9fd80458e84d0ff5b4712a https://doi.org/10.3390/ma19173785

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Implication

Experimental study demonstrates enhanced silicon carbide whisker growth across coke structural rearrangement at 1200–1400 °C, highlighting coke as an effective internal source for refractories.

Temperature-Dependent Evolution of Coke Structure and Growth Mechanisms of SiC Whiskers Synthesized from Coke and Silicon Powder Under Graphite-Burial Conditions

Key Points

Discussion

Implication

Cite This Study

Temperature-Dependent Evolution of Coke Structure and Growth Mechanisms of SiC Whiskers Synthesized from Coke and Silicon Powder Under Graphite-Burial Conditions

Key Points

Discussion

Implication

Cite This Study

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