Preparation of ferroelectric BaTiO3 thin films on polycrystalline BaPbO3 substrates by sol-gel processing and their electrical properties

Barium titanate thin films were deposited on metallic conducting BaPbO3 ceramic substrates by the sol-gel method using metal alkoxides. The thin films with a thickness of around 0.4 μm were confirmed to have a perovskite structure and to be highly resistive with a resistivity of more than 1011 Ω cm at room temperature. The typical dielectric constant and dissipation factor of the films were 600 and less than 2% (1 kHz), respectively, at room temperature. From ferroelectric hysteresis measurements a remnant polarization of around 1.5 μC/cm2 and a coercive field of about 28 kV/cm were obtained for the films.